^s.mi'cond\j.ctoi tpioducti, (inc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2n5194, 2N5195 preferred devices silicon pnp power transistors these devices are designed for use in power amplifier and switching circuits: excellent safe area limits. complement to npn 2n519l 2n5192. maximum ratings (note 1) rating collector-emitter voltage collector-base voltage emitter-base voltage collector current base current total device dissipation @ tc = 25 c derate above 25 c operating and storage junction temperature range symbol vceo vcb veb 'c ib pd tj, tstg 2n5194 60 60 2N5195 80 80 5.0 4.0 1 0 40 320 -65 to + 150 unit vdc vdc vdc adc adc w w/ c c/w 4 ampere power transistors pnp silicon 60 - 80 volts to-225aa thermal characteristics characteristic thermal resistance, junction-to-case symbol bjc max 3.12 unit c/w marking diagram stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. indicates jedec registered data. y = year vwv = work week 2n519x = device code x = 4 or 5 nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. qualify semi-conductors
electrical characteristics (tc = 25cc unless otherwise noted) (note 2) characteristic j symbol j min off characteristics max j_ unit_| collector-emitter sustaining voltage (note 3) (lc = 0.1 adc, ib = 0) 2n5194 2N5195 collector cutoff current (vce = 60 vdc, ib = 0) 2n5194 (vce = 80 vdc, ib = 0) 2N5195 collector cutoff current (vce = 6 vdc, vbe(0ff) = 1 .5 vdc) 2n5194 (vce = 80 vdc, v6e(off) = 1 .5 vdc) 2n51 95 (vce = 60 vdc, vbe(0tf) = 1.5 vdc, tc = 125c) 2n5194 (vce = 80 vdc, vbe(off) = 1.5 vdc, tc = 125c) 2N5195 collector cutoff current (vcb = 60 vdc, ie = 0) 2n5194 (vcb = 80 vdc, ie = 0) 2N5195 emitter cutoff current (vbe = 5.0 vdc, lc = 0) vceo(sus) !ceo icex icbo !ebo 60 80 - - ? _ - - - - - ? - 1.0 1.0 0.1 0.1 2.0 2.0 0.1 0.1 1.0 vdc madc madc madc madc on characteristics dc current gain (note 3) (lc = 1.5 adc, vce = 2.0 vdc) 2n5194 2N5195 (lc = 4.0 adc, vce = 2.0 vdc) 2n5194 2N5195 collector-emitter saturation voltage (note 3) (lc = 1.5 adc, ib = 0.15 adc) (lc = 4.0adc, ib = 1.0 adc) base-emitter on voltage (note 3) (lc= 1.5 adc, vce = 2.0 vdc) hfe vce(sat) vee(on) 25 20 10 7.0 - - - 100 80 - 0.6 1.4 1.2 - vdc vdc dynamic characteristics current-gain ? bandwidth product (lc = 1 .0 adc, vce = 10 vdc, f = 1 .0 mhz) ft 2.0 - mhz 2. indicates jedec registered data. 3. pulse test: pulse width < 300 (is, duty cycle < 2.0%. to-225 notes: 1. dimensioning and tolerancing per ansi y14.5m.1982, 2, controlling dimension: inch. 3 077-01 thru -08 obsolete, new standard 077-09. dim a b c d f g h j k m q f) s u v inches min 0.425 0,295 0,095 0,020 0.115 0.094 0.050 0.015 0.575 5c' 0.148 0.045 0,025 0145 0,040 max 0.435 0.305 0.105 0,026 0.130 bsc 0,095 0.025 0.655 rvp 0.158 0.065 0.035 0.155 ? millimeters min 10.80 7.50 2,42 ? sjjlj 2.93 2.39 1.27 0.39 14.61 5" 3.76 1,15 0,64 3,69 1,02 max 11.04 7,74 2.66 0.66 3.30 bsc 2,41 0.63 16.63 ryp 4.01 1,65 0.88 3,93 ? style 1: pin1. emitter 2 collector 3 base
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